UC2635 и другие
| Компонент | Описание | Производитель | |
| 101C263U100CD2B | Low-ESR, Wide-Temperature Grade |
List of Unclassifed Manufacturers |
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| 101C263U100CD2B | Type 101C -55 `C to 105 `C Low-ESR, Wide-Temperature Grade |
Cornell Dubilier Electronics |
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| 101C263U150DN2D | Low-ESR, Wide-Temperature Grade |
List of Unclassifed Manufacturers |
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| 101C263U150DN2D | Type 101C -55 `C to 105 `C Low-ESR, Wide-Temperature Grade |
Cornell Dubilier Electronics |
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| 2SC2630 | NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
Mitsubishi Electric Semiconductor |
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| 2SC2631 | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
Panasonic Semiconductor |
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| 2SC2631 | Silicon PNP epitaxial planer type |
Panasonic Semiconductor |
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| 2SC2632 | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
Panasonic Semiconductor |
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| 2SC2634 | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic Semiconductor |
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| 2SC2636 | Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation) |
Panasonic Semiconductor |
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