TP3070 и другие
| Компонент | Описание | Производитель | |
| BUP307 | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) |
Siemens Semiconductor Group |
 |
| BUP307D | IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens Semiconductor Group |
|
| CEP3070 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
|
| CP307 | Small Signal Transistor NPN - Silicon Darlington Transistor Chip |
Central Semiconductor Corp |
|
| CP307_10 | Small Signal Transistor NPN - Silicon Darlington Transistor Chip |
Central Semiconductor Corp |
|
| HMC311LP3_07 | InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz |
Hittite Microwave Corporation |
|
| HMC369LP3_07 | SMT GaAs HBT MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 9.9 - 12.7 GHz OUTPUT |
Hittite Microwave Corporation |
|
| IRFP3077PBF | HEXFET Power MOSFET |
International Rectifier |
|
| KBP307 | Voltage Range 50 to 1000 Volts Current 3.0 Amperes |
Shenzhen Ping Sheng Electronics Co., Ltd. |
|
| KBP307G | Single Phase 3.0 AMPS. Glass Passivated Bridge Rectifiers |
Taiwan Semiconductor Company, Ltd |
|