TCT_P_10 и другие
| Компонент | Описание | Производитель | |
| K4S281632C-TP1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung semiconductor |
 |
| K4S281632C-TP1L | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung semiconductor |
|
| LPCTP-1 | Mobile Mobile Phones Portable Radio Portable Satellite PDA |
ITT Industries |
|
| M5M4V4S40CTP-12 | 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Semiconductor |
|
| M5M4V4S40CTP-15 | 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Semiconductor |
|
| NSSW008CT-P1 | TYPE WHITE LED |
NICHIA CORPORATION |
|
| TCTP1A156M8R | Chip tantalum capacitors(Bottom surface electrode type : Large capacitance) |
Rohm |
|
| TCTP1A226M8R | Chip tantalum capacitors(Bottom surface electrode type : Large capacitance) |
Rohm |
|
| TCT_P_10 | Chip tantalum capacitors (Bottom surface electrode type) |
Rohm |
|
| TCT_P_11 | Chip tantalum capacitors(Bottom surface electrode type : Large capacitance) |
Rohm |
|