ST2319SRG Datasheet

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ST2319SRG - ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

ST2319SRG datasheet - ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.



Название/Part No:
ST2319SRG

Описание/Description:
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

Производитель/Maker:
Stanson Technology (STANSON)

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ST2319SRG
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
Stanson Technology

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