SB160B-G datasheet - Leaded Schottky Barrier Rectifiers | SB160B-G.pdf by Comchip Technology | SB160B-G documentation view on EHAM.RU

SB160B-G - Leaded Schottky Barrier Rectifiers

SB160B-G datasheet - Leaded Schottky Barrier Rectifiers

Название/Part No:

SB160B-G

Описание/Description:

Leaded Schottky Barrier Rectifiers

Производитель/Maker:

Comchip Technology (COMCHIP)

Ссылка на datasheet:

SB160B-G и другие

Компонент	Описание	Производитель	PDF
B160B	Surface Mount Schottky Barrier Rectifiers	Weitron Technology
B160B	SCHOTTKY BARRIER RECTIFIERS	Compact Technology Corp.
B160B	Surface Mount Schottky Barrier Rectifiers	Weitron Technology
M5M29GB160BVP	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY	Mitsubishi Electric Semiconductor
M5M29GB160BVP	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY	Mitsubishi Electric Semiconductor
M5M29GB160BWG	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY	Mitsubishi Electric Semiconductor
M5M29GB160BWG	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY	Mitsubishi Electric Semiconductor
M5M29WB160BVP	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY	Mitsubishi Electric Semiconductor
M5M29WB160BVP	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY	Mitsubishi Electric Semiconductor
M5M29WB160BWG	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY	Mitsubishi Electric Semiconductor