STD6N10 и другие
| Компонент | Описание | Производитель | |
| MTD6N10 | POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
Motorola, Inc |
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| MTD6N10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
Motorola, Inc |
|
| MTD6N15 | TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM |
Motorola, Inc |
|
| MTD6N15 | Power Field Effect Transistor DPAK for Surface Mount |
ON Semiconductor |
|
| MTD6N15-1 | Power Field Effect Transistor DPAK for Surface Mount |
ON Semiconductor |
|
| MTD6N15T4 | Power Field Effect Transistor DPAK for Surface Mount |
ON Semiconductor |
|
| MTD6N15T4G | NChannel EnhancementMode Silicon Gate |
ON Semiconductor |
|
| STD6N10 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
STMicroelectronics |
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