Компонент | Описание | Производитель | |
MTD2N50 | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
Motorola, Inc |
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MTD2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
Motorola, Inc |
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STD2N50 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
STMicroelectronics |
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STD2N50-1 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
STMicroelectronics |
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