RM150DZ и другие
| Компонент | Описание | Производитель | |
| CM150DU-12F | Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts |
Powerex Power Semiconductors |
 |
| CM150DU-12F | IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Semiconductor |
|
| CM150DU-12H | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Semiconductor |
|
| CM150DU-12H | HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Semiconductor |
|
| CM150DU-12H | Dual IGBTMOD 150 Amperes/600 Volts |
Powerex Power Semiconductors |
|
| CM150DU-12H_09 | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Semiconductor |
|
| CM150DU-24F | IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Semiconductor |
|
| CM150DU-24F | Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
|
| CM150DU-24F | HIGH POWER SWITCHING USE |
Mitsubishi Electric Semiconductor |
|
| CM150DU-24F_09 | IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Semiconductor |
|