2SC5812 и другие
| Компонент | Описание | Производитель | |
| 2SC5810 | TOSHIBA Transistor Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
 |
| 2SC5812 | Silicon NPN Epitaxial VHF/UHF wide band amplifier |
Hitachi Semiconductor |
|
| 2SC5812 | Silicon NPN Epitaxial VHF/UHF wide band amplifier |
Renesas Technology Corp |
|
| 2SC5812WG-TR-E | Silicon NPN Epitaxial VHF/UHF wide band amplifier |
Renesas Technology Corp |
|
| 2SC5813 | Silicon NPN epitaxial planar type |
Panasonic Semiconductor |
|
| 2SC5819 | High-Speed Switching Applications |
Toshiba Semiconductor |
|
| 2SC5819 | High-Speed Switching Applications DC-DC Converter Applications |
Toshiba Semiconductor |
|
| 2SC5819_04 | High-Speed Switching Applications |
Toshiba Semiconductor |
|
| NX8570SC581-BA | 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR |
California Eastern Labs |
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| NX8571SC581-BA | 1550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR |
California Eastern Labs |
|