LPT-1001F и другие
| Компонент | Описание | Производитель | |
| 30CPT100_12 | High Performance Schottky Generation 5.0, 2 x 15 A |
Vishay Siliconix |
 |
| 30PT100_11 | High Performance Generation 5.0 Schottky Rectifier, 30 A |
Vishay Siliconix |
|
| 63CPT100_12 | High Performance Schottky Generation 5.0, 2 x 30 A |
Vishay Siliconix |
|
| APT1001 | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
Advanced Power Technology |
|
| APT1001 | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
Advanced Power Technology |
|
| APT1001R1AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
Advanced Power Technology |
|
| APT1001R1BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
|
| APT1001R1BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
|
| APT1001R1HVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
|
| APT1001R3BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
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