LF-215N и другие
| Компонент | Описание | Производитель | |
| 2N7002F215 | N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. |
NXP Semiconductors |
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| B41851F2158M000 | Single-ended capacitors |
EPCOS |
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| B41851F2158M002 | Aluminum electrolytic capacitors |
EPCOS |
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| B41851F2158M012 | Aluminum electrolytic capacitors |
EPCOS |
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| B43081F2156M000 | Aluminum electrolytic capacitors |
EPCOS |
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| B43081F2156M000 | Aluminum electrolytic capacitors |
EPCOS |
|
| B43081F2156M001 | Aluminum electrolytic capacitors |
EPCOS |
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| B43081F2156M006 | Aluminum electrolytic capacitors |
EPCOS |
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| B43081F2156M006 | Aluminum electrolytic capacitors |
EPCOS |
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| B43081F2156M008 | Aluminum electrolytic capacitors |
EPCOS |
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