K4S561632E datasheet - 256Mb E-die SDRAM Specification | K4S561632E.pdf by Samsung semiconductor | K4S561632E documentation view on EHAM.RU

K4S561632E - 256Mb E-die SDRAM Specification

K4S561632E datasheet - 256Mb E-die SDRAM Specification

Название/Part No:

K4S561632E

Описание/Description:

256Mb E-die SDRAM Specification

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

~/K4S561632E.pdf

K4S561632E и другие

Компонент	Описание	Производитель	PDF
K4S561632A	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S561632A-TC/L1H	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S561632A-TC/L1L	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S561632A-TC/L75	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S561632A-TC/L80	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S561632B	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S561632B-TC/L1H	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S561632B-TC/L1L	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S561632B-TC/L75	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S561632C	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM	Samsung semiconductor