KM418RD8D datasheet

KM418RD8D - 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

Название/Part No:

KM418RD8D

Описание/Description:

128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

KM418RD8D и другие

Компонент	Описание	Производитель	PDF
KM418RD8AC	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
KM418RD8AC-RG60	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz).	Samsung semiconductor
KM418RD8AC-RK70	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).	Samsung semiconductor
KM418RD8AC-RK80	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).	Samsung semiconductor
KM418RD8ACD-RK70	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
KM418RD8ACD-RK80	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
KM418RD8AD	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
KM418RD8AD-RG60	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz).	Samsung semiconductor
KM418RD8AD-RK70	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).	Samsung semiconductor
KM418RD8AD-RK80	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).	Samsung semiconductor