KM416V254DT-6 datasheet

KM416V254DT-6 - 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period

Название/Part No:

KM416V254DT-6

Описание/Description:

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

KM416V254DT-6 и другие

Компонент	Описание	Производитель	PDF
KM416V254DT-5	256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period	Samsung semiconductor
KM416V254DT-6	256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period	Samsung semiconductor
KM416V254DT-7	256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period	Samsung semiconductor
KM416V254DTL-5	256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh	Samsung semiconductor
KM416V254DTL-6	256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh	Samsung semiconductor
KM416V254DTL-7	256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh	Samsung semiconductor