KM416V1004CT-6 datasheet

KM416V1004CT-6 - 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

Название/Part No:

KM416V1004CT-6

Описание/Description:

3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

KM416V1004CT-6 и другие

Компонент	Описание	Производитель	PDF
KM416V1004CT-45	1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms	Samsung semiconductor
KM416V1004CT-5	3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns	Samsung semiconductor
KM416V1004CT-50	1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms	Samsung semiconductor
KM416V1004CT-6	3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung semiconductor
KM416V1004CT-60	1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms	Samsung semiconductor
KM416V1004CT-L5	3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns	Samsung semiconductor
KM416V1004CT-L6	3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung semiconductor
KM416V1004CTL-45	1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh	Samsung semiconductor
KM416V1004CTL-50	1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh	Samsung semiconductor
KM416V1004CTL-60	1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh	Samsung semiconductor