IRFS641 и другие
| Компонент | Описание | Производитель | |
| IRFS640 | Improved inductive ruggedness |
Samsung semiconductor |
 |
| IRFS640 | 200V N-Channel MOSFET |
Fairchild Semiconductor |
|
| IRFS640A | Rugged Gate Oxide Technology |
Fairchild Semiconductor |
|
| IRFS640A | Improved gate charge |
Samsung semiconductor |
|
| IRFS640B | 200V N-Channel MOSFET |
Tiger Electronic Co.,Ltd |
|
| IRFS640B | 200V N-Channel MOSFET |
Fairchild Semiconductor |
|
| IRFS641 | Improved inductive ruggedness |
Samsung semiconductor |
|
| IRFS644A | Advanced Power MOSFET |
Fairchild Semiconductor |
|
| IRFS644B | 250V N-Channel MOSFET |
Fairchild Semiconductor |
|