Компонент | Описание | Производитель | |
IRG4PH30 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
International Rectifier |
|
IRG4PH30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
International Rectifier |
|
IRG4PH30K | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
International Rectifier |
|
IRG4PH30KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
International Rectifier |
|
IRG4PH30KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
|
IRG4PH30KPBF | INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT |
International Rectifier |