1N3587 и другие
| Компонент | Описание | Производитель | |
| 1N3581A | Ref/Reg Diode, 400mW |
New Jersey Semi-Conductor Products, Inc. |
 |
| 1N3587 | Si Rectifier, 200A |
New Jersey Semi-Conductor Products, Inc. |
|
| 2N3583 | NPN SILICON POWER TRANSISTORS. |
Comset Semiconductor |
|
| 2N3583 | 5 Amp, 250V, High Voltage NPN Silicon Power Transistors |
Microsemi Corporation |
|
| 2N3583 | NPN SILICON TRANSISTOR |
Central Semiconductor Corp |
|
| 2N3583 | SI NPN POWER BJT |
New Jersey Semi-Conductor Products, Inc. |
|
| 2N3583 | Power Transistors |
Central Semiconductor Corp |
|
| 2N3583 | Bipolar NPN Device in a Hermetically sealed TO66 |
Seme LAB |
|
| 2N3583 | SPRINGFIELD, NEW JERSEY 07081 |
New Jersey Semi-Conductor Products, Inc. |
|
| 2N3583 | POWER TRANSISTORS(35W) |
Mospec Semiconductor |
|