CM200TU-12F datasheet

CM200TU-12F - Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts

Название/Part No:

CM200TU-12F

Описание/Description:

Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts

Производитель/Maker:

Powerex Power Semiconductors (POWEREX)

Ссылка на datasheet:

CM200TU-12F и другие

Компонент	Описание	Производитель	PDF
CM200TU-12F	Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts	Powerex Power Semiconductors
CM200TU-12F	IGBT MODULES HIGH POWER SWITCHING USE	Mitsubishi Electric Semiconductor
CM200TU-12F	HIGH POWER SWITCHING USE	Mitsubishi Electric Semiconductor
CM200TU-12F_09	IGBT MODULES HIGH POWER SWITCHING USE	Mitsubishi Electric Semiconductor
CM200TU-12H	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE	Mitsubishi Electric Semiconductor
CM200TU-12H	Six IGBTMOD 200 Amperes/600 Volts	Powerex Power Semiconductors
CM200TU-12H	HIGH POWER SWITCHING USE INSULATED TYPE	Mitsubishi Electric Semiconductor
CM200TU-12H_09	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE	Mitsubishi Electric Semiconductor